Manganese amidinate offers uniform thin Mn films,for improving electronics and solar cells

ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) are techniques modified to deliver uniform thin films for these applications. Bis(N,N'-di-i-propylpentylamidinato)manganese(II),25-0230, CAS1188406-04-3  is a new manganese precursor offered by Strem Chemicals for such applications.

25-0230  CAS188406-04-3melts at 70 ^oC and has a highly selective reactivity with molecular hydrogen or water vapour affording fine films of metal or metal oxides.  The high thermal stability (>200^oC) and volatility (vapor pressure at 90^oC is 50 mTorr) make it a great candidate for ALD and CVD applications. This amidinate precursor is highly reactive, affording the deposition of manganese at reasonable rates in the growth of Mn(0) films. This reactive precursor is far superior to the carbonyl analogues currently available.

25-0230 + SiO₂ surface (>300 ^oC) => MnSi_xO_y

The formation of MnSi_xO_y affords a smooth insulator (sheet resistance > 10¹⁷ W/sq) while serving as a barrier against Cu, O₂, and H₂O diffusion. The manganese metal penetrates only a few nanometers into the SiO₂ resulting in conformal amorphous manganese silicate layers.  There is strong adhesion between Cu(Mn) and insulators, which increases the lifetime of circuits against failure by electromigration.

Alternatively, analogous MnN_x films can be prepared by CVD of 25-0230 vapour with NH₃.  MnN_x prepared by CVD of manganese amidinate vapor with NH₃ uniformly coats very narrow holes.  MnN_x + Si form an insulating MnSi_yO_zN_w layer, hindering diffusion of Cu, H₂O, and O_2.  As an interconnect structure for integrated circuits, manganese silicate and manganese silicon nitride layers completely surround copper wires. The barrier against copper diffusion protects the insulator from degradation and therefore premature breakdown during manufacturing and use. The manganese-containing coating also protects the copper from corrosion by oxygen or water found in its surroundings

References:

1. J. Electrochem. Soc., 2010, 157, D341. 
2. J. Phys. Chem. C, 2012, 116, 23585.

Products mentioned in this blog and related products:

25-0230   Bis(N,N'-di-i-propylpentylamidinato)manganese(II), min. 98%  [1188406-04-3]

25-0200   Bis(cyclopentadienyl)manganese, 98+% (Manganocene)  [73138-26-8]

98-4060   Bis(cyclopentadienyl)manganese, 98+%, 25-0200, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD  [73138-26-8]

25-0210   Bis(ethylcyclopentadienyl)manganese, min. 98%  [101923-26-6]

98-4065   Bis(ethylcyclopentadienyl)manganese, min. 98%, 25-0210, contained in 50 ml Swagelok® cylinder (96-1070) for CVD/ALD  [101923-26-6]

25-0235   Bis(pentamethylcyclopentadienyl)manganese, min. 98% (Decamethylmanganocene)

25-0245   Bis(i-propylcyclopentadienyl)manganese, min. 98%[85594-02-1]

25-0390   Cyclopentadienylmanganese tricarbonyl, 98% Cymantrene [12079-65-1]

25-1330   Manganese carbonyl, 98% [10170-69-1]

25-1550   Methylcyclopentadienylmanganese tricarbonyl, min. 97% [12108-13-3]

25-5000   Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)manganese(III), 99% [Mn(TMHD)3]  66[14324-99-3]

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