TSMC has certified these solutions for static and dynamic voltage drop analysis and advanced signal and power electromigration (EM) verification to meet the 10-nanometer requirements.
Complex device structure and high drive currents in FinFET devices make power integrity and EM key design requirements. With innovative algorithms and analysis engines, ANSYS solutions deliver needed accuracy while reducing turnaround time to meet the increased computational requirements caused by modern products' growing design complexity. Advanced technology support in RedHawk and Totem, including EM rule compliance and color-aware resistance extraction, help deliver greater reliability and manufacturability.
"The certification of RedHawk and Totem for 10nm FinFET technology ensures our products' ability to deliver the accuracy required for power and advanced EM sign-off," said Fares Mubarak, vice president and general manager of ANSYS. "By continuously collaborating with TSMC, we are able to provide optimized tools and methodologies for the industry's most advanced process nodes and the customers using them in their emerging design technologies."
"TSMC and ANSYS collaborate closely on 10nm FinFET EM/IR tool certification for early adopters to ensure more robust and reliable system-on-chips for next-generation electronic products," said Suk Lee, TSMC senior director, Design Infrastructure Marketing Division.
The ANSYS portfolio of product offerings will be showcased at the upcoming TSMC Technology Symposium in San Jose, California; Austin, Texas and Boston, as well as at Design Automation Conference (DAC) in exhibit booth #1232.