Atomic Layer Deposition (ALD) deposits thin films on a substrate with monolayer precision, critical for leading edge deposition, which is then used in microelectronics, photovoltaics and energy storage
Another process called Chemical Vapor Deposition (CVD) in which a chemical process in which precursor gases are introduced into a reaction chamber at near ambient temperatures and directed towards a heated substrate in order to induce controlled chemical reactions.
Allyl(cyclopentadienyl)palladium(II) [46-0065] and its Phenyl Allyl Derivative [46-0285]s design features a Palladium(II) at the centre with just one ƞ5 - and one ƞ3 - hydrocarbon ligand. There are no elements other than Palladium, Carbon and Hydrogen present in the molecule, which makes it a highly valuable material for CVD and ALD applications. It converts readily into Pd (0) under thermal conditions.
This red solid material is highly soluble in hexane, as well as all common organic solvents, and can be easily sublimed. However, a vacuum greater than 30 torr @ 40°C is required for transfer into the vapor phase as mentioned in the literature.1
The metal content of this C8H10Pd compound is almost 50%.
The scaffold of the molecule shows an arrangement of the ligands in which the plane of the Cp ring is parallel to the plane formed by the three allyl carbons, so the allyl ligand is “side on” or perpendicular to the ligand-metal-ligand axis.
An analogue of the original CpPdAllyl is the derivative (46-0285)CAS Number: 105333-10-6 in which the allyl ligand is decorated with a phenyl group. This compound can also be sublimed2 although, as expected, it has a lower volatility. It is suitable for CVD applications and also highly active in catalysis.
References:
- Inorg. Synth. Vol 28, 1990, 343-345
- Organometallics, 2012, 31, 2470-2475